標題: Micro-fabrication of hemispherical poly-silicon shells standing on hemispherical cavities
作者: Lin, CH
Lo, YC
Hsu, WS
機械工程學系
Department of Mechanical Engineering
關鍵字: isotropic wet etching;hemispherical cavity;polysilicon shells;high-aspect-ratio
公開日期: 2001
摘要: In the current paper, the fabrication process of a novel proposed hemispherical polysilicon shell standing on a hemispherical silicon cavity is demonstrated. This micro-fabrication process combines both bulk and surface micromachining, which include the isotropic wet etching, a novel mask design, the thick photo resist coating and exposure, and high-aspect-ratio curved sacrificial technique. In isotropic wet etching of a hemispherical cavity, the optimal concentration of etchant is experimentally determined along with adequate ultrasonic vibration during wet etching to produce the circle-like of hemispherical cavity. The conventional alignment mark, which will be destroyed during the rather long isotropic wet etching process, is replaced by a novel mask design with the second alignment mark. Also, for a deep hemispherical cavity larger than 100mum, the traditional photo resist can not be coated on the corner surface well. The thick photo resist, AZ4620, is found to be able to overcome this problem and be successfully exposed all through its bottom surface. Furthermore, the deposited sacrificial layer materials (PSG) on this cavity will usually result in thinner layer near the corner. In addition, the curved gap of PSG layer has the feature with high-aspect-ratio. These make the PSG etching difficult. Therefore, two steps etching process with two different hydrofluoric concentrations are used to release the PSG with 2mum thickness and 150mum arc length.
URI: http://hdl.handle.net/11536/18980
http://dx.doi.org/10.1117/12.449010
ISBN: 0-8194-4322-0
ISSN: 0277-786X
DOI: 10.1117/12.449010
期刊: DEVICE AND PROCESS TECHNOLOGIES FOR MEMS AND MICROELECTRONICS II
Volume: 4592
起始頁: 514
結束頁: 524
顯示於類別:會議論文


文件中的檔案:

  1. 000174910000059.pdf