標題: Smart dielectrics of fluorinated silicon glass prepared by liquid phase deposition method
作者: Yeh, CF
Chen, TF
Lee, YC
Liu, CH
Lin, SS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: LPD;FSG;selective;dielectric;damascene;RIE
公開日期: 2001
摘要: Fluorinated silicon glass (FSG) film prepared by using liquid-phase deposition (LPD) is very potential for use as a smart dielectric owing to its high fluorine concentration (8.6 at %), low dielectric constant (3.46), low stress (43 Mpa), low leakage current density (4.6E-9 A/cm(2) at 2 MV/cm) and low deposition temperature (room temperature). By temperature difference and conventional water-adding methods, the LPD technologies and the key process parameters affecting the physicochemical properties and the electrical characteristics will be introduced. Furthermore, the LPD FSG has been applied as gate oxide to MOSFET's and polysilicon TFT's. Owing to its novel property of selective deposition, LPD FSG has been also employed to cap the sidewalls for degradation-free damascene trenches, and to fabricate micro contact holes for the n(+)/p diodes and the Schottky diodes.
URI: http://hdl.handle.net/11536/18976
http://dx.doi.org/10.1117/12.448980
ISBN: 0-8194-4322-0
ISSN: 0277-786X
DOI: 10.1117/12.448980
期刊: DEVICE AND PROCESS TECHNOLOGIES FOR MEMS AND MICROELECTRONICS II
Volume: 4592
起始頁: 43
結束頁: 54
Appears in Collections:Conferences Paper


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