標題: Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process
作者: Fu, Yi-Keng
Chen, Bo-Chun
Fang, Yen-Hsiang
Jiang, Ren-Hao
Lu, Yu-Hsuan
Xuan, Rong
Huang, Kai-Feng
Lin, Chia-Feng
Su, Yan-Kuin
Chen, Jebb-Fang
Chang, Chun-Yen
電子物理學系
Department of Electrophysics
關鍵字: Chemical wet-etching;GaN;light extraction;near-ultraviolet (NUV) light-emitting diode (LED)
公開日期: 1-十月-2011
摘要: The InGaN-based light-emitting diodes (LEDs) with a roughened backside on the N-face surface of GaN substrate were fabricated through a chemical wet-etching process to increase light-extraction efficiency. The stable crystallographic etching planes were formed as the GaN {10 (11) over bar} planes. When the near-ultraviolet and blue LED were operated as a forward current of 20 mA, the output power of LEDs was improved from 13.2 and 19.9 mW to 25.6 and 24.0 mW, respectively. The different enhanced ratio is attributed to the different transmittance as a function of wavelength is caused from hexagonal pyramid on N-face GaN substrate after wet-etching process.
URI: http://dx.doi.org/10.1109/LPT.2011.2161276
http://hdl.handle.net/11536/18960
ISSN: 1041-1135
DOI: 10.1109/LPT.2011.2161276
期刊: IEEE PHOTONICS TECHNOLOGY LETTERS
Volume: 23
Issue: 19
起始頁: 1373
結束頁: 1375
顯示於類別:期刊論文


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  1. 000294854800003.pdf