標題: Functionalized Single-Walled Carbon-Nanotube-Blended P3HT-Based Thin-Film Transistors With Multiwalled Carbon-Nanotube Source and Drain Electrodes
作者: Chang, Chia-Hao
Chien, Chao-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Carbon nanotubes (CNTs);functionalized single-walled carbon nanotubes (F-SWCNTs);multiwalled carbon nanotube source and drain electrodes (MWCNT S/Ds);organic thin-film transistors (OTFTs);poly(3-hexylthiophene) (P3HT)
公開日期: 1-十月-2011
摘要: We demonstrate the superior performance of thin-film transistors with a functionalized single-walled carbon-nanotube-blended poly(3-hexylthiophene) (F-SWCNT-P3HT) channel and multiwalled CNT source and drain electrodes (MWCNT S/Ds). Compared with transistors with a P3HT channel and gold electrodes, the mobility of transistors with an F-SWCNT-P3HT channel and MWCNT S/Ds is increased by more than one order of magnitude, i.e., from 0.0052 to 0.072 cm(2)/V . s. This improvement results not only from the well-known fast carrier transport assisted by the blend of F-SWCNTs but also, more importantly, from the reduced contact resistance between P3HT and MWCNT S/Ds.
URI: http://dx.doi.org/10.1109/LED.2011.2163054
http://hdl.handle.net/11536/18872
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2163054
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 10
起始頁: 1457
結束頁: 1459
顯示於類別:期刊論文


文件中的檔案:

  1. 000295340300047.pdf