標題: ENHANCED H-2-PLASMA EFFECTS ON POLYSILICON THIN-FILM TRANSISTORS WITH THIN ONO GATE-DIELECTRICS
作者: YANG, CK
LEE, CL
LEI, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-六月-1995
摘要: This letter reports that passivation effects of the H-2-plasma on the polysilicon thin-film transistors (TFT's) were greatly enhanced if the TFT's have a thin Si3N4 film On their gate-dielectrics. Compared to the conventional devices with only the SiO2 gate dielectric, the TFT's with Si3N4 have much more improvement on their subthreshold swing and field-effect mobility after H-2-plasma treatment.
URI: http://dx.doi.org/10.1109/55.790717
http://hdl.handle.net/11536/1887
ISSN: 0741-3106
DOI: 10.1109/55.790717
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 16
Issue: 6
起始頁: 228
結束頁: 229
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RA18200005.pdf