標題: Inspection of the Current-Mirror Mismatch by Secondary Electron Potential Contrast With In Situ Nanoprobe Biasing
作者: Liu, Po-Tsun
Lee, Jeng-Han
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
關鍵字: Current mirror;laterally diffused p-channel metal-oxide-semiconductor (LDPMOS);nanoprobing;secondary electron potential contrast (SEPC)
公開日期: 1-十月-2011
摘要: The mismatch mechanism in a current mirror consisting of laterally diffused p-channel MOS (LDPMOS) technology was investigated using a scanning electron microscope (SEM) with in situ nanoprobing. The electrical measurement found a saturation current mismatch of 52 mu A between the LDPMOS transistors. Furthermore, the proposed inspection identified successfully 0.4-mu m p-well layer misalignment, which was the root cause of the mismatch. This letter demonstrates that an in situ nanoprobing system is a powerful tool for enhancing p-well dopant contrast in a SEM, analyzing site-specific failures, and studying device physics under a dynamic scope.
URI: http://dx.doi.org/10.1109/LED.2011.2161567
http://hdl.handle.net/11536/18850
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2161567
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 10
起始頁: 1418
結束頁: 1420
顯示於類別:期刊論文


文件中的檔案:

  1. 000295340300034.pdf