標題: AN ELECTRICAL METHOD TO CHARACTERIZE THERMAL-REACTIONS OF PD/GAAS AND NI/GAAS CONTACTS
作者: CHUANG, HF
LEE, CP
LIU, DC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: ACTIVATION ENERGY;DIFFUSION COEFFICIENTS;SCHOTTKY CONTACTS
公開日期: 1-六月-1995
摘要: Capacitance-voltage (C-V) and current-voltage (I-V) measurements were used to study the thermal reaction of Pd/GaAs contacts and Ni/GaAs contacts. The thickness of GaAs consumed by the metal/GaAs reaction during annealing was calculated from C-V analyses and I-V analyses. For annealing temperatures below 350 degrees C, the Schottky characteristics of the diodes were good but the electrical junction moves into the GaAs after annealing. The amount of junction movement was calculated directly from our measurements. The diffusion coefficients of Pd and Ni in GaAs at 300 degrees C were estimated both to be around 1.2 x 10(-14) cm(2)/s.
URI: http://dx.doi.org/10.1007/BF02659738
http://hdl.handle.net/11536/1884
ISSN: 0361-5235
DOI: 10.1007/BF02659738
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 24
Issue: 6
起始頁: 767
結束頁: 772
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RC21000010.pdf