Full metadata record
DC FieldValueLanguage
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorChou, Yi-Tehen_US
dc.contributor.authorTeng, Li-Fengen_US
dc.contributor.authorLi, Fu-Haien_US
dc.contributor.authorFuh, Chur-Shyangen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.date.accessioned2014-12-08T15:26:32Z-
dc.date.available2014-12-08T15:26:32Z-
dc.date.issued2011-10-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2011.2163181en_US
dc.identifier.urihttp://hdl.handle.net/11536/18837-
dc.description.abstractA thin-film transistor (TFT) with bilayer stack structure of amorphous nitrogenated InGaZnO (IGZO) (a-IGZO:N) on an IGZO channel is proposed to enhance device stability. The a-IGZO: N acting as a back-channel passivation (BCP) is formed sequentially just after the sputter-deposited amorphous IGZO (a-IGZO) film with in situ nitrogen incorporation process. The a-IGZO:N can effectively prevent the a-IGZO channel from exposing to the atmosphere and retarding interactions with ambient oxygen species. Also, the optical energy bandgap of the a-IGZO:N film is decreased due to the addition of nitrogen. This causes the a-IGZO TFT with a-IGZO:N BCP to exhibit high immunity to the ultraviolet-radiation impact.en_US
dc.language.isoen_USen_US
dc.subjectInGaZnO (IGZO)en_US
dc.subjectin situ back-channel passivation (BCP)en_US
dc.subjectnitrogenated InGaZnO (IGZO:N)en_US
dc.titleAmbient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO:N Bilayer Stack Channel Layersen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2011.2163181en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume32en_US
dc.citation.issue10en_US
dc.citation.spage1397en_US
dc.citation.epage1399en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000295340300027-
dc.citation.woscount5-
Appears in Collections:Articles


Files in This Item:

  1. 000295340300027.pdf