標題: Ambient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO:N Bilayer Stack Channel Layers
作者: Liu, Po-Tsun
Chou, Yi-Teh
Teng, Li-Feng
Li, Fu-Hai
Fuh, Chur-Shyang
Shieh, Han-Ping D.
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: InGaZnO (IGZO);in situ back-channel passivation (BCP);nitrogenated InGaZnO (IGZO:N)
公開日期: 1-十月-2011
摘要: A thin-film transistor (TFT) with bilayer stack structure of amorphous nitrogenated InGaZnO (IGZO) (a-IGZO:N) on an IGZO channel is proposed to enhance device stability. The a-IGZO: N acting as a back-channel passivation (BCP) is formed sequentially just after the sputter-deposited amorphous IGZO (a-IGZO) film with in situ nitrogen incorporation process. The a-IGZO:N can effectively prevent the a-IGZO channel from exposing to the atmosphere and retarding interactions with ambient oxygen species. Also, the optical energy bandgap of the a-IGZO:N film is decreased due to the addition of nitrogen. This causes the a-IGZO TFT with a-IGZO:N BCP to exhibit high immunity to the ultraviolet-radiation impact.
URI: http://dx.doi.org/10.1109/LED.2011.2163181
http://hdl.handle.net/11536/18837
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2163181
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 10
起始頁: 1397
結束頁: 1399
顯示於類別:期刊論文


文件中的檔案:

  1. 000295340300027.pdf