|標題:||Ambient Stability Enhancement of Thin-Film Transistor With InGaZnO Capped With InGaZnO:N Bilayer Stack Channel Layers|
Shieh, Han-Ping D.
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
|關鍵字:||InGaZnO (IGZO);in situ back-channel passivation (BCP);nitrogenated InGaZnO (IGZO:N)|
|摘要:||A thin-film transistor (TFT) with bilayer stack structure of amorphous nitrogenated InGaZnO (IGZO) (a-IGZO:N) on an IGZO channel is proposed to enhance device stability. The a-IGZO: N acting as a back-channel passivation (BCP) is formed sequentially just after the sputter-deposited amorphous IGZO (a-IGZO) film with in situ nitrogen incorporation process. The a-IGZO:N can effectively prevent the a-IGZO channel from exposing to the atmosphere and retarding interactions with ambient oxygen species. Also, the optical energy bandgap of the a-IGZO:N film is decreased due to the addition of nitrogen. This causes the a-IGZO TFT with a-IGZO:N BCP to exhibit high immunity to the ultraviolet-radiation impact.|
|期刊:||IEEE ELECTRON DEVICE LETTERS|