|標題:||Characterization and Modeling of on-chip inductor substrate coupling effect|
Department of Electronics Engineering and Institute of Electronics
|摘要:||The substrate coupling effects of two adjacent coplanar spiral inductors are characterized and modeled. The noise magnitude between two 45mum-away inductors can be reduced by 6.83 dB by using guard-ring surrounding each inductor, and improved by 10.28 dB further by adding patterned ground polysilicon shield beneath at 3 GHz. The inductor with patterned polysilicon shield beneath shows improved quality factor and noise isolation. Moreover, a macro model is presented for modeling quality factor and inductance of on-chip spiral inductor and associated neighboring inductor's coupling noise effect.|
|期刊:||2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS|
|Appears in Collections:||Conferences Paper|
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