標題: ANALYSIS OF TRANSPORT CRITICAL-CURRENT DENSITY IN A BENT BI-PB-SR-CA-CU-O SILVER-SHEATHED TAPE
作者: LEE, WD
HORNG, L
YANG, TJ
CHIOU, BS
電子物理學系
電控工程研究所
Department of Electrophysics
Institute of Electrical and Control Engineering
公開日期: 1-六月-1995
摘要: The experimental results on the magnetic behavior of the transport critical current density in a bent Bi based superconducting tape have shown that the irreversible strain limit epsilon(irrev) for the onset of permanent strain damage to Ag sheathed superconductors is not dependent on the magnetic field, nor does the normalized I-c(H, epsilon)/I-c(0, epsilon) current depend on the strain at least up to 0.5 T at 77 K. Such a behavior has been attributed to two reasons: (1) The intrinsic pinning properties are unchanged in a bent tape; (2) The strain effect is extrinsic and arises from superconductor cracks. Thus, based on these arguments a Josephson junction tunneling model with cracks in between the grain boundaries is proposed to explain the J(c) behavior quite well for a bent granular high-T-c superconducting tape. Our model calculation shows that the critical current density of high-T-c superconductor may be enhanced by increasing the strain tolerance epsilon(irrev) and the epsilon(irrev) is determined by the properties of Ag sheathed tape and its related material parameters, which are dependent on the connectivity of the grain boundaries.
URI: http://hdl.handle.net/11536/1883
ISSN: 0921-4534
期刊: PHYSICA C
Volume: 247
Issue: 3-4
起始頁: 215
結束頁: 220
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RE85200003.pdf