標題: Effect of Lateral Body Terminal on Silicon-Oxide-Nitride-Oxide-Silicon Thin-Film Transistors
作者: Li, Hung-Wei
Chang, Ting-Chang
Chang, Geng-Wei
Lin, Chia-Sheng
Tsai, Tsung-Ming
Jian, Fu-Yen
Tai, Ya-Hsiang
Lee, Ming-Hsien
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
關鍵字: Erasing efficiency;hole injection;silicon-oxide-nitride-oxide-silicon (SONOS);thin-film transistors (TFTs)
公開日期: 1-十月-2011
摘要: We investigate lateral-body-terminal silicon-oxide-nitride-oxide-silicon thin-film transistors (LBT SONOS TFTs) under erasing operation. These devices have superior erasing efficiency by gate as well as lateral body electrode exerting bias. The erasing mechanism of LBT SONOS TFTs has been illustrated by the energy band diagrams. Holes gain sufficient energy by the electric field in the deep-depletion region to surmount the tunneling oxide barrier because of exerting body bias under erasing operation. In addition, the lateral body terminal exerting bias can enhance the erasing efficiency and is confirmed by different erasing conditions and structures. In addition, to verify the hole current injecting from the lateral body site, the size effect of LBT SONOS TFTs is also discussed.
URI: http://dx.doi.org/10.1109/LED.2011.2162481
http://hdl.handle.net/11536/18826
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2162481
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 10
起始頁: 1394
結束頁: 1396
顯示於類別:期刊論文


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  1. 000295340300026.pdf