Title: Reduced leakage current of nickel induced crystallization poly-Si TFTs by a simple chemical oxide layer
Authors: Lai, Ming-Hui
Wu, YewChung Sermon
材料科學與工程學系
Department of Materials Science and Engineering
Keywords: Metal-induced crystallization (MIC);Thin film transistors (TFTs);Chemical oxide;Leakage current;Poly-Si
Issue Date: 1-Oct-2011
Abstract: Ni-metal-induced crystallization (MIC) of amorphous Si (a-Si) has been used to fabricate low-temperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). However, the leakage current of MIC-TFT is high. In this study, a chemical oxide layer was used to avoid excess of Ni atoms into a-Si layer during MIC process, which was simple and without extra expensive instrument. The minimum leakage current and on/off current ratio were significantly improved. (C) 2011 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2011.07.002
http://hdl.handle.net/11536/18815
ISSN: 0038-1101
DOI: 10.1016/j.sse.2011.07.002
Journal: SOLID-STATE ELECTRONICS
Volume: 64
Issue: 1
Begin Page: 6
End Page: 9
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