標題: TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrier
作者: Chiang, CC
Chen, MC
Wu, ZC
Li, LJ
Jang, SM
Yu, CH
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2002
摘要: This work investigates the thermal stability and barrier characteristics of two species of silicon carbide dielectric films, alpha-SiCN with a dielectric constant of 4.9 and alpha-SiC with a dielectric constant of 3.8. The TDDB lifetime of Cu damascene metallization structure is greatly improved by using a alpha-SiCN/alpha-SiC bilayer dielectric stack as the etching stop layer (ESL). This improvement is presumably due to the alpha-SiC dielectric's lower leakage current, absence of nitridation on Cu surface, and better adhesion on Cu as well as OSG intermetal dielectric (IMD), though the alpha-SiC film has a very slow deposition rate. We believe that the alpha-SiCN/alpha-SiC bilayer dielectric is a favorable combination for the ESL because alpha-SiCN can protect alpha-SiC from plasma attack during the photoresist stripping.
URI: http://hdl.handle.net/11536/18800
http://dx.doi.org/10.1109/IITC.2002.1014933
ISBN: 0-7803-7216-6
DOI: 10.1109/IITC.2002.1014933
期刊: PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE
起始頁: 200
結束頁: 202
Appears in Collections:Conferences Paper