標題: MODELING THE POSITIVE-FEEDBACK REGENERATIVE PROCESS OF CMOS LATCHUP BY A POSITIVE TRANSIENT POLE METHOD .2. QUANTITATIVE-EVALUATION
作者: KER, MD
WU, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-六月-1995
摘要: The positive-feedback regenerative process in a p-n-p-n structure during CMOS latchup transition has been modeled by a time-varying positive transient pole, The maximum peak value of the positive pole and the time required to first initiate the positive pole are adopted as two useful and meaningful parameters to quantitatively investigate the influence of device parameters on the positive-feedback regeneration of CMOS latchup. Some design guidelines can be obtained to improve latchup immunity of CMOS IC's.
URI: http://hdl.handle.net/11536/1872
ISSN: 0018-9383
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 42
Issue: 6
起始頁: 1149
結束頁: 1155
顯示於類別:期刊論文


文件中的檔案:

  1. A1995QZ20000019.pdf