標題: A NEW APPROACH TO MODELING THE SUBSTRATE CURRENT OF PRESTRESSED AND POST-STRESSED MOSFETS
作者: YANG, JJ
SHAOSHIUN, S
CHOU, PC
CHEN, CH
LIN, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-六月-1995
摘要: In this paper, we propose a closed form expression of a new and accurate analytical substrate current model for both pre-stressed and post-stressed MOSFET's, It was derived based on the concept of effective electric field, which gives a more reasonable impact ionization rate in the lucky-electron model, This effective electric field, composed by two experimentally determined parameters, ran be regarded as a result of nonlocal heating effects within de,ices, This model shows a significant improvement to the conventional local field model. One salient feature of the present model is that it allows us to characterize the time evolution of the substrate current of stressed MOSFET's for the first time. Experimental verification for a wide variety of MOSFET's with effective channel lengths down to 0.3 mu m shows that the new model is very accurate and is feasible for any kind of MOS device with different drain structures, The present model can be applied to explore the hot carrier effect in designing submicrometer MOS devices with emphasis on the design optimization of a device drain engineering issue, In addition, the present model is well suited for device reliability analysis and circuit level simulations.
URI: http://hdl.handle.net/11536/1870
ISSN: 0018-9383
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 42
Issue: 6
起始頁: 1113
結束頁: 1119
顯示於類別:期刊論文


文件中的檔案:

  1. A1995QZ20000014.pdf