標題: Wide bandgap n-type and p-type semiconductor porous junction devices as photovoltaic cells
作者: Lin, Yuan-Pai
Chao, Yu-Chiang
Meng, Hsin-Fei
Zan, Hsiao-Wen
Horng, Sheng-Fu
物理研究所
光電工程學系
Institute of Physics
Department of Photonics
公開日期: 12-十月-2011
摘要: In junction absorber photovoltaics doped wide bandgap n-type and p-type semiconductors form a porous interpenetrating junction structure with a layer of low bandgap absorber at the interface. The doping concentration is high enough such that the junction depletion width is smaller than the pore size. The highly conductive neutral region then has a dentrite shape with fingers reaching the absorber to effectively collect the photo-carriers swept out by the junction electric field. With doping of 10(19) cm(-3) corresponding to a depletion width of 25 nm, pore size of 32 nm, absorber thickness close to exciton diffusion length of 17 nm, absorber bandgap of 1.4 eV and carrier mobility over 10(-5) cm(2) V(-1) s(-1), numerical calculation shows the power conversion efficiency is as high as 19.4%. It rises to 23% for a triplet exciton absorber.
URI: http://dx.doi.org/10.1088/0022-3727/44/40/405103
http://hdl.handle.net/11536/18684
ISSN: 0022-3727
DOI: 10.1088/0022-3727/44/40/405103
期刊: JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume: 44
Issue: 40
結束頁: 
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