標題: Impacts of HF etching on ultra-thin core gate oxide integrity in dual gate oxide CMOS technology
作者: Lee, DY
Lin, HC
Chen, CL
Huang, TY
Wang, TH
Lee, TL
Chen, SC
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2003
摘要: In this paper, we investigate the effects of HF etching on the integrity of ultra-thin oxides in dual gate oxide (DGO) CMOS technologies. We found that both the BF concentration in the etching solution and the over etching (OE) time are important parameters that greatly affect the device performance and reliability. Our results indicate that, with a proper over etching period, using a heavy BF solution results in better ultra-thin gate oxides in terms of reduced defect density, improved device performance and reliability, compared to using diluted BF solution. It is also found for the first time that negative-bias-temperature instability (NBTI) immunity for PMOSFETs is improved by using heavy HF solution.
URI: http://hdl.handle.net/11536/18670
ISBN: 0-7803-7747-8
期刊: 2003 8TH INTERNATIONAL SYMPOSIUM ON PLASMA- AND PROCESS-INDUCED DAMAGE
起始頁: 77
結束頁: 80
Appears in Collections:Conferences Paper