標題: THE LONG-TERM RELAXATION AND BUILDUP TRANSIENT OF PHOTOCONDUCTIVITY IN SI1-XGEX/SI QUANTUM-WELLS
作者: CHU, LH
CHEN, YF
CHANG, DC
CHANG, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 5-六月-1995
摘要: The long-term relaxation and build-up transient of photoconductivity has been observed in Si1-xGex/Si quantum wells. The long-term relaxation behaviour pelt) of photoconductivity can be described by a stretched-exponential function, I-pc(t) = I-pc(0) exp[-(t/tau)(beta)] (0<i beta <1) for T < 160 K, which is usually observed in a wide class of disordered materials. The long-term build-up transient of photoconductivity has been measured and formulated at different temperatures, which also indicates the existence of the band-tail states due to alloy disorder. The distribution of tail states has been confirmed to be exponential in energy. Our results suggest that the alloy potential fluctuations induced by compositional fluctuations can strongly influence the transport as well as optical properties of Si1-xGex/Si quantum wells.
URI: http://dx.doi.org/10.1088/0953-8984/7/23/021
http://hdl.handle.net/11536/1861
ISSN: 0953-8984
DOI: 10.1088/0953-8984/7/23/021
期刊: JOURNAL OF PHYSICS-CONDENSED MATTER
Volume: 7
Issue: 23
起始頁: 4525
結束頁: 4532
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RC23600021.pdf