標題: A high isolation CMFB downconversion micromixer using 0. 18-urn deep N-well CMOS technology
作者: Meng, CC
Xu, SK
Wu, TH
Chao, MH
Huang, GW
資訊工程學系
Department of Computer Science
公開日期: 2003
摘要: CMOS deep N-well technology can eliminate body effects of NMOS transistors and improve LO-IF and LO-RF isolation in a Gilbert micromixer. A 37 dB LO-IF and 38 dB LO-RF isolation downconversion micromixer with 19 dB conversion gain, IP1dB=-19.5 dBm and IIP3=-12.5 dBm when RF=2.4 GHz and LO=2.25 GHz is demonstrated in this paper by using 0.18 mum deep N-well CMOS technology. e input return loss and output return loss are better than 15 dB for frequencies up to 6 GHz. On the other hand, a downconversion micromixer without deep n-well has almost identical power performance but achieves only 20 dB LO-IF isolation and 21 dB LO-RF isolation even if two kinds of mixers are fabricated in adjacent areas of the same wafer. The downconversion micromixer used here has intrinsically single-to-differential input stage and active differential PMOS loads to increase IF differential gain while CMFB is used to stabilize bias points. An IF differential amplifier converts differential output into a single-ended output. Finally, an off-chip rat-race coupler provides balanced LO signals to facilitate isolation measurement.
URI: http://hdl.handle.net/11536/18555
http://dx.doi.org/10.1109/RFIC.2003.1214023
ISBN: 0-7803-7694-3
ISSN: 1529-2517
DOI: 10.1109/RFIC.2003.1214023
期刊: 2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS
起始頁: 619
結束頁: 622
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000184031700143.pdf