標題: The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 mu m technology nodes
作者: Huang, CH
Chan, KT
Chen, CY
Chin, A
Huang, GW
Tseng, C
Liang, V
Chen, JK
Chien, SC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2003
摘要: As scaling down the RF MOSFET from 0.18 to 0.13 mum technology nodes, the f(T) increases but the NFmin becomes worse by increasing similar to0.2 dB. A small NFmin of 0.93 dB is measured at 5.8 GHz in 0.18 mum MOSFET using 50 fingers but increases as either increasing or decreasing finger number. This abnormal dependence and higher noise at 0.13 mum is accurately analyzed by equivalent circuit model and due to the combined gate resistance and substrate effect.
URI: http://hdl.handle.net/11536/18553
http://dx.doi.org/10.1109/RFIC.2003.1213965
ISBN: 0-7803-7694-3
ISSN: 1529-2517
DOI: 10.1109/RFIC.2003.1213965
期刊: 2003 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS
起始頁: 373
結束頁: 376
顯示於類別:會議論文


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