標題: Low RF loss and noise of transmission lines on Si substrates using an improved ion implantation process
作者: Chan, KT
Chin, A
McAlister, SP
Chang, CY
Tseng, C
Liang, V
Chen, JK
Chien, SC
Duh, DS
Lin, WJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2003
摘要: Very low power loss less than or equal to 0.6 dB at 110 GHz and noise of < 0.25 dB at 18 GHz have been measured on transmission lines fabricated on Si substrates and implanted with proton. In contrast, much worse power loss of 5 dB and higher noise of 2.5 dB were measured without implantation. This large improvement arises from the high resistivity by proton implantation, which was also done after forming the transmission lines and at a reduced energy of similar to 4 MeV for easier process integration into current VLSI technology.
URI: http://hdl.handle.net/11536/18544
http://dx.doi.org/10.1109/MWSYM.2003.1212529
ISBN: 0-7803-7695-1
ISSN: 0149-645X
DOI: 10.1109/MWSYM.2003.1212529
期刊: 2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3
起始頁: 963
結束頁: 966
Appears in Collections:Conferences Paper


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