標題: BACK-GATING EFFECTS ON THE GA0.1IN0.8P/INP/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTOR
作者: LIN, KC
CHANG, CY
WU, CC
CHEN, HD
CHEN, PA
CHAN, SH
WU, JW
CHANG, EY
材料科學與工程學系
電控工程研究所
Department of Materials Science and Engineering
Institute of Electrical and Control Engineering
關鍵字: HEMT;LP-MOCVD;BACK-GATING EFFECT
公開日期: 1-七月-1995
摘要: Pseudomorphic GaInP/InP/InGaAs high electron mobility transistors (HEMT) with improved Schottky contacts and excellent electrical characteristics are grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) on the InP substrate. These HEMTs with 1.71 mu m gate length have an average extrinsic transconductance of 225 mS/mm. The back-gating effects of this device structure are investigated for the first time in this structure. Both positive and negative bias are applied to the ohmic and Schottky back-gate contacts of these devices. The positive back-gate bias has no effect on the drain current or the output transconductances of these devices. The effect of the negative back-gate bias is very similar to that when negative bias is applied on the gate of these HEMTs.
URI: http://dx.doi.org/10.1143/JJAP.34.3500
http://hdl.handle.net/11536/1844
ISSN: 0021-4922
DOI: 10.1143/JJAP.34.3500
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 34
Issue: 7A
起始頁: 3500
結束頁: 3503
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RK73000015.pdf