標題: A NEW CONSTANT-FIELD SCALING THEORY FOR MOSFETS
作者: MAA, JJ
WU, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-1995
摘要: The constant-field scaling theory (CONFIST) is evaluated in this work, The persistence of the drain-induced barrier lowering characteristics is selected to be essential condition of the CONFIST, Assessment on the accuracy of various constraint equations for MOS device miniaturization is carried out and the application limitations of these equations are studied in detail, The intrinsic incompleteness of the original CONFIST is then revealed by scaling the constraint equation, It is found that the restriction of requiring invariant Poisson equation after scaling in the original CONFIST must be released to prevent the scaling from being limited by the quasi-body effect, The original CONFIST is revised accordingly, and the modified version (CONFIST-2) shows that the application limit of the original CONFIST is about 0.5 mu m and the vertical dimensions must be scaled more than the lateral ones.
URI: http://dx.doi.org/10.1109/16.391208
http://hdl.handle.net/11536/1842
ISSN: 0018-9383
DOI: 10.1109/16.391208
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 42
Issue: 7
起始頁: 1262
結束頁: 1268
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RE53000010.pdf