標題: COMPOSITIONAL DISORDERING OF ALGAAS/GAAS SUPERLATTICES BY USING THE LOW-TEMPERATURE-GROWN GAAS
作者: TSANG, JS
LEE, CP
FAN, JC
TSAI, KL
CHEN, HR
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-1995
摘要: The use of low-temperature (similar to 200 degrees C) grown GaAs by molecular beam epitaxy to induce compositional disordering of AlGaAs/GaAs superlattices has been studied. After furnace annealing between 700 and 850 degrees C for 30 min, an obvious blue shift in the peak wavelength of the superlattice emission is observed by the 77 K photoluminescence (PL), indicating that the emission has been changed from that of the GaAs quantum wells to that of the intermixed AlGaAs. The PL shift and the depth profile of Al concentration measured by secondary ion mass spectrometry indicate that the superlattice is nearly totally disordered after 850 degrees C annealing. (C) 1995 American Vacuum Society.
URI: http://dx.doi.org/10.1116/1.588183
http://hdl.handle.net/11536/1837
ISSN: 1071-1023
DOI: 10.1116/1.588183
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume: 13
Issue: 4
起始頁: 1536
結束頁: 1538
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RP99200022.pdf