標題: LOW-TEMPERATURE PROCESSED MOSFETS WITH LIQUID-PHASE DEPOSITED SIO2-XFX AS GATE INSULATOR
作者: YEH, CF
LIN, SS
HONG, TY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-1995
摘要: Device performances of MOSFET's with SiO2-xFx gate oxides prepared by an extremely low-temperature (15 degrees C) liquid phase deposition (LPD) method were investigated. The electrical characteristics, including threshold voltage of 2.1 V, peak effective mobility (mu(eff)) of 525 cm(2)V . s, and subthreshold suing of 134 mV/decade, show the devices exhibit comparable performance to other low-temperature processed MOSFET's. This demonstrates that LPD SiO2-xFx can be a suitable candidate for future gate insulators in low-temperature processed MOSFET's.
URI: http://dx.doi.org/10.1109/55.388719
http://hdl.handle.net/11536/1833
ISSN: 0741-3106
DOI: 10.1109/55.388719
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 16
Issue: 7
起始頁: 316
結束頁: 318
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RE49100008.pdf