標題: EFFECTS OF PLASMA TREATMENT ON THE PROPERTIES OF ROOM-TEMPERATURE LIQUID-PHASE DEPOSITED (LPD) OXIDE-FILMS
作者: YEH, CF
LIN, SS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-1995
摘要: Effects of plasma treatment including H-2 or O-2 On the properties of LPD oxide were investigated. After plasma treatment, the physicochemical characteristics of LPD oxide films were greatly improved. No matter whether with H-2 or O-2 plasma treatment, the LPD oxide film exhibited higher refractive index and lower P-etch rate than as-deposited films. The electrical characteristics were also improved. This indicates that plasma treatment can effectively passivate the vacancies in LPD oxide. It was also found that the treatment using O-2 source was better than using H-2. This was the same as for the case of thermal annealing. Because the plasma treated LPD oxide exhibited superior results to the thermally annealed one and the temperature in plasma treatment was much lower than that in thermal annealing, plasma treatment is more suitable for improving the characteristics of LPD oxide films.
URI: http://dx.doi.org/10.1016/0022-3093(95)00116-6
http://hdl.handle.net/11536/1829
ISSN: 0022-3093
DOI: 10.1016/0022-3093(95)00116-6
期刊: JOURNAL OF NON-CRYSTALLINE SOLIDS
Volume: 187
Issue: 
起始頁: 81
結束頁: 85
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RK19500014.pdf