標題: Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique
作者: Gu, SH
Wang, MT
Chan, CT
Zous, NK
Yeh, CC
Tsai, WJ
Lu, TC
Wang, TH
Ku, J
Lu, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2004
摘要: The lateral distribution of programmed charge in a hot electron program/hot hole erase nitride storage flash cell is investigated by using a charge pumping technique. Our study shows that the secondly programmed bit has a wider trapped charge distribution than the first programmed bit. In addition, we find prograrnmed charge spreads further into the channel with program/erase cycle number.
URI: http://hdl.handle.net/11536/18211
http://dx.doi.org/10.1109/RELPHY.2004.1315428
ISBN: 0-7803-8315-X
DOI: 10.1109/RELPHY.2004.1315428
期刊: 2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS
起始頁: 639
結束頁: 640
Appears in Collections:Conferences Paper


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