標題: AN ANALYTICAL MODEL FOR THE ABOVE-THRESHOLD CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS
作者: CHERN, HN
LEE, CL
LEI, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-七月-1995
摘要: An analytical model for the above-threshold characteristics of long-channel, small-grain and thin channel polysilicon thin film transistors (TFT's) is presented. This model is constructed by considering the barrier potential and the carrier trapping effect at grain boundaries of the channel. A band tail state located at E(c) - 0.15 eV is taken into account to simulate the I-V characteristics. Based on the model, the theoretically simulated results show good agreement with the experimental data of the plasma-passivated and unpassivated TFT devices in a wide range of the gate, drain biases and the temperature. The correlation of the transconductance to the gate bias is also investigated, It is found that the decrease of grain-boundary barrier potential with the gate voltage enhances the transconductance, while this enhancement effect becomes insignificant and causes the decrease of the transconductance at the high gate bias.
URI: http://dx.doi.org/10.1109/16.391205
http://hdl.handle.net/11536/1820
ISSN: 0018-9383
DOI: 10.1109/16.391205
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 42
Issue: 7
起始頁: 1240
結束頁: 1246
顯示於類別:期刊論文