標題: A novel methodology for extracting effective density-of-states in poly-Si thin-film transistors
作者: Lin, HC
Yeh, KL
Lee, MH
Su, YC
Huang, TY
Shen, SW
Lin, HY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2004
摘要: A novel methodology that greatly simplifies the procedure of extracting the effective density-of-states (DOS) in polycrystalline-Si thin-film transistors (poly-Si TFTs) is proposed and demonstrated. The characterization is performed on a Schottky barrier (SB) TFT with electrical source/drain extensions induced by a field-plate. Only one single device and two simple subthreshold I-V measurements at room temperature are needed for full band-gap DOS extraction. Impacts of different process treatments are clearly resolved using this methodology.
URI: http://hdl.handle.net/11536/18126
http://dx.doi.org/10.1109/IEDM.2004.1419290
ISBN: 0-7803-8684-1
DOI: 10.1109/IEDM.2004.1419290
期刊: IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST
起始頁: 781
結束頁: 784
Appears in Collections:Conferences Paper


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