標題: 3D GOI CMOSFETs with novel IrO2(Hf) dual gates and high-kappa dielectric on 1P6M-0.18 mu m-CMOS
作者: Yu, DS
Chin, A
Laio, CC
Lee, CF
Cheng, CF
Chen, WJ
Zhu, C
Li, MF
Yoo, WJ
McAlister, SP
Kwong, DL
交大名義發表
National Chiao Tung University
公開日期: 2004
摘要: For the first time, we demonstrate 3D integration of self-aligned IrO2(Hf)/LaAlO3/GOI CMOSFETs above 0.18 pm Si CMOSFETs. At EOT=1.4nm, the novel IrO2(Hf) dual gates (4.4 and 5.1 eV workfunction) on control 2D LaAlO3/Si devices have high electron and hole mobilities of 203 and 67 cm(2)/Vs. On the 3D structure the LaAlO3/GOI shows even higher 389 and 234 cm(2)/Vs mobilities, and process compatibility with current Si VLSI. The higher drive current, larger integration density, shorter interconnects distance, and simple process of 3D approach can help solve the AC power issue and 2D scaling limitation.
URI: http://hdl.handle.net/11536/18124
http://dx.doi.org/10.1109/IEDM.2004.1419101
ISBN: 0-7803-8684-1
DOI: 10.1109/IEDM.2004.1419101
期刊: IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST
起始頁: 181
結束頁: 184
Appears in Collections:Conferences Paper


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