標題: A new method for extracting the counter-implanted channel profile of enhancement-mode p-MOSFET's
作者: Wu, CM
Wu, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-十二月-1997
摘要: A new methodology is proposed to extract the nonuniform channel doping profile of enhancement mode p-MOSFET's with counter implantation, based on the relationship between device threshold voltage and substrate bias. A self-consistent mathematical analysis is developed to calculate the threshold voltage and the surface potential of counter-implanted long-channel p-MOSFET at the onset of heavy inversion, Comparisons between analytic calculation and two-dimensional (2-D) numerical analysis have been made and the accuracy of the developed analytic model has been verified, Based on the developed analytic model, an automated extraction technique has been successfully implemented to extract the channel doping profile. With the aid of a 2-D numerical simulator, the subthreshold current can be obtained by the extracted channel doping profile. Good agreements have been found with measured subthreshold characteristics for both long-and short-channel devices, This new extraction methodology can be used for precise process monitoring and device optimization purposes.
URI: http://dx.doi.org/10.1109/16.644642
http://hdl.handle.net/11536/181
ISSN: 0018-9383
DOI: 10.1109/16.644642
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 44
Issue: 12
起始頁: 2227
結束頁: 2233
顯示於類別:期刊論文


文件中的檔案:

  1. A1997YH43200017.pdf