標題: A NEW SIMPLIFIED THRESHOLD-VOLTAGE MODEL FOR N-MOSFETS WITH NONUNIFORMLY DOPED SUBSTRATE AND ITS APPLICATION TO MOSFETS MINIATURIZATION
作者: MAA, JJ
WU, CY
交大名義發表
電子工程學系及電子研究所
National Chiao Tung University
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Aug-1995
摘要: The formulation, verification, and application of a new simplified 2-D threshold voltage model for n-MOSFET's with nonuniformly doped substrate profile are provided, in which the averaged normal field at the Si/SiO2 interface in the active channel is quoted from a simplified solution of two-dimensional Poisson equation using the Green function technique. Starting with the expression of this average normal field, a simple threshold-voltage model for short-channel n-MOSFET's with nonuniformly doped substrate profile is explicitly expressed in terms of device structures and terminal voltages by considering parabolic source-drain boundary potentials. Moreover, the effects of the junction depth on the threshold voltage are examined in detail. It is shown that the DLBL effect cannot be completely eliminated by simply increasing the substrate doping concentration. Comparisons among developed model, 2-D numerical analysis, and experimental data have been made and the accuracy of the developed analytical model has been verified. In addition, a direct extension of our model to the case of uniformly doped substrates leads to a new constraint equation for device miniaturization.
URI: http://dx.doi.org/10.1109/16.398665
http://hdl.handle.net/11536/1791
ISSN: 0018-9383
DOI: 10.1109/16.398665
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 42
Issue: 8
起始頁: 1487
結束頁: 1494
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  1. A1995RJ15000013.pdf