標題: ACCURATE QUASI-TEM SPECTRAL-DOMAIN ANALYSIS OF SINGLE AND MULTIPLE COUPLED MICROSTRIP LINES OF ARBITRARY METALLIZATION THICKNESS
作者: KUO, JT
交大名義發表
電信工程研究所
National Chiao Tung University
Institute of Communications Engineering
公開日期: 1-八月-1995
摘要: The quasi-TEM spectral domain approach (SDA) is extended to rigorously and efficiently analyze single and multiple coupled microstrip lines of arbitrary metallization thickness, The charge distributions on both the horizontal and vertical conductor surfaces are modeled by global basis functions, This results in a relatively small matrix for accurate determination of the line parameters of coupled thick microstrips. A convergence study is performed for the results of a pair of coupled lines with crucial structural parameters to explore the conditions for obtaining reliable solutions using the technique. Results for thick microstrips are validated through comparison with those from available measurements and another theoretical technique. The soundness of the technique is further demonstrated by looking into the trend of the results obtained by a simplified model in which the structural parameters are pushed, step by step, to the numerical extremities. Variations of circuit parameters of a four-line coupled microstrip structure due to the change of finite metallization thickness are presented and discussed.
URI: http://dx.doi.org/10.1109/22.402277
http://hdl.handle.net/11536/1789
ISSN: 0018-9480
DOI: 10.1109/22.402277
期刊: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
Volume: 43
Issue: 8
起始頁: 1881
結束頁: 1888
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RN56500018.pdf