標題: Low frequency noise degradation in ultra-thin oxide (I5A) analog n-MOSFETs resulting from valence-band tunneling
作者: Wu, JW
You, JW
Ma, HC
Cheng, CC
Hsu, C
Huang, GW
Chang, CS
Wang, T
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: flicker noise;n-MOSFET;valenceband;tunneling;trap emission and capture times;random telegraph signal
公開日期: 2005
摘要: Abnormal increase of low frequency flicker noise in analog n-MOSFETs with gate oxide in valence band tunneling domain is investigated. In 15 angstrom oxide devices, valence-band electron tunneling from Si substrate to poly-gate occurs at a positive gate voltage and results in the splitting of electron and hole quasi Fermi-levels in the channel. The excess low frequency noise is attributed to electron and hole recombination at interface traps between the two quasi Fermilevels. The trap capture and emission times in valence band tunneling domain are extracted from random telegraph signal. The dependence of measured trap times on gate voltage is consistent with our proposed model.
URI: http://hdl.handle.net/11536/17745
http://dx.doi.org/10.1109/RELPHY.2005.1493095
ISBN: 0-7803-8803-8
DOI: 10.1109/RELPHY.2005.1493095
期刊: 2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL
起始頁: 260
結束頁: 264
Appears in Collections:Conferences Paper