標題: On-chip high-voltage charge pump circuit in standard CMOS processes with polysilicon diodes
作者: Ker, Ming-Dou
Chen, Shih-Lun
電機學院
College of Electrical and Computer Engineering
公開日期: 2005
摘要: An on-chip high-voltage charge pump circuit realized with the polysilicon diodes in standard (bulk) CMOS process is presented in this paper. Because the polysilicon diodes are fully isolated from the substrate, the output voltage of the charge pump circuit is not limited by the junction breakdown voltage of MOSFETs. The polysilicon diodes can be implemented in the standard CMOS processes without extra process steps. The proposed charge pump circuit has been fabricated in a 0.25-mu m 2.5-V standard CMOS process. The output voltage of the 12-stage charge pump circuit can be pumped up to 28.08 V, which is much higher than the n-well/p-substrate breakdown voltage (18.9 V) in a 0.25-mu m 2.5-V standard CMOS process.
URI: http://hdl.handle.net/11536/17720
http://dx.doi.org/10.1109/ASSCC.2005.251689
ISBN: 0-7803-9162-4
DOI: 10.1109/ASSCC.2005.251689
期刊: 2005 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE, PROCEEDINGS OF TECHNICAL PAPERS
起始頁: 157
結束頁: 160
顯示於類別:會議論文


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  1. 000240872200040.pdf