標題: THE ELECTRICAL CHARACTERISTICS OF POLYSILICON OXIDE GROWN IN PURE N2O
作者: LAI, CS
LEI, TF
LEE, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-九月-1995
摘要: N2O was used to grow silicon polyoxide. It was found that the N2O-grown polyoxide had a lower leakage current but a higher breakdown field when the top-electrode was positively biased, This is opposite to that of conventional O-2-grown polyoxide. Moreover, it had less electron trapping when stressed and a larger charge-to-breakdown.
URI: http://dx.doi.org/10.1109/55.406796
http://hdl.handle.net/11536/1769
ISSN: 0741-3106
DOI: 10.1109/55.406796
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 16
Issue: 9
起始頁: 385
結束頁: 386
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RQ87100005.pdf