標題: Ultra-broadband THz field detection by ion-implanted III-VPC antenna
作者: Pan, CL
光電工程學系
Department of Photonics
關鍵字: THz radiation;detection;arsenic-ion-implanted GaAs;proton-bombarded InP;III-V;photoconductive antenna
公開日期: 2005
摘要: The photoconductive (PC) antenna fabricated on arsenic-ion-implanted GaAs (GaAs:As+) and proton-bombarded InP (InP:H+) substrates are shown to have a useful detection bandwidths beyond 30 THz. This is comparable to that of the reference LT-GaAs PC antenna. The signal-to-noise ratio of these ion-implanted III-V PC antennas are, however, worse than that of the LT-GaAs devices because of the higher stray currents of the former under illumination. Ion-implanted III-V PC antennas are nevertheless attractive because the implanters are widely available, process parameters well-established and compatible with the IC industry. Implantations in selective areas are also straight forward. Our results suggest that ion-implanted III-V material can be a good choice as substrate or THz PC antennas, if the resistivity is increased by a proper annealing process and/or optimizing the implantation recipe.
URI: http://hdl.handle.net/11536/17660
http://dx.doi.org/10.1117/12.596668
ISBN: 0-8194-5699-3
ISSN: 0277-786X
DOI: 10.1117/12.596668
期刊: Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX
Volume: 5725
起始頁: 53
結束頁: 60
顯示於類別:會議論文


文件中的檔案:

  1. 000229338500006.pdf