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dc.contributor.authorCHENG, HCen_US
dc.contributor.authorUENG, SYen_US
dc.contributor.authorWANG, PWen_US
dc.contributor.authorKANG, TKen_US
dc.contributor.authorCHAO, TSen_US
dc.date.accessioned2014-12-08T15:03:12Z-
dc.date.available2014-12-08T15:03:12Z-
dc.date.issued1995-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.34.5037en_US
dc.identifier.urihttp://hdl.handle.net/11536/1765-
dc.description.abstractThin oxides thermally grown on the reactive-ion-etched (RIE) silicon substrates in N2O and diluted O-2 ambients have been studied. The RIE will strongly affect the silicon surface microroughness and lead to poor oxides properties. Using the after-treatment-chamber (ATC) process, CF4 addition in the O-2 plasma can further improve the time-zero-to-dielectric-breakdown (TZDB) characteristics of the thin oxides as compared with pure O-2 plasma. This is because CF4 addition in the ATC can remove the damaged silicon layer and smooth the silicon surface since the (O)2 plasma can effectively only strip the polymeric layer. In addition, the N2O-grown oxides can enlarge the process window of the CF4/O-2 ATC treatments with respect to pure oxides.en_US
dc.language.isoen_USen_US
dc.subjectREACTIVE ION ETCHINGen_US
dc.subjectETCHING DAMAGEen_US
dc.subjectPOSTETCHING TREATMENTen_US
dc.subjectSILICON DIOXIDEen_US
dc.subjectTZDBen_US
dc.subjectINTERFACE MICROROUGHNESSen_US
dc.titleEFFECTS OF POSTETCHING TREATMENTS ON ELECTRICAL CHARACTERISTICS OF THERMAL OXIDES ON REACTIVE-ION-ETCHED SILICON SUBSTRATESen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.34.5037en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume34en_US
dc.citation.issue9Aen_US
dc.citation.spage5037en_US
dc.citation.epage5042en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995RX26800084-
dc.citation.woscount1-
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