標題: EFFECTS OF POSTETCHING TREATMENTS ON ELECTRICAL CHARACTERISTICS OF THERMAL OXIDES ON REACTIVE-ION-ETCHED SILICON SUBSTRATES
作者: CHENG, HC
UENG, SY
WANG, PW
KANG, TK
CHAO, TS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: REACTIVE ION ETCHING;ETCHING DAMAGE;POSTETCHING TREATMENT;SILICON DIOXIDE;TZDB;INTERFACE MICROROUGHNESS
公開日期: 1-九月-1995
摘要: Thin oxides thermally grown on the reactive-ion-etched (RIE) silicon substrates in N2O and diluted O-2 ambients have been studied. The RIE will strongly affect the silicon surface microroughness and lead to poor oxides properties. Using the after-treatment-chamber (ATC) process, CF4 addition in the O-2 plasma can further improve the time-zero-to-dielectric-breakdown (TZDB) characteristics of the thin oxides as compared with pure O-2 plasma. This is because CF4 addition in the ATC can remove the damaged silicon layer and smooth the silicon surface since the (O)2 plasma can effectively only strip the polymeric layer. In addition, the N2O-grown oxides can enlarge the process window of the CF4/O-2 ATC treatments with respect to pure oxides.
URI: http://dx.doi.org/10.1143/JJAP.34.5037
http://hdl.handle.net/11536/1765
ISSN: 0021-4922
DOI: 10.1143/JJAP.34.5037
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 34
Issue: 9A
起始頁: 5037
結束頁: 5042
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RX26800084.pdf