標題: Low-leakage In(0.53)Ga(0.47)As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic In(x)Ga(1-x)P buffer
作者: Lin, CK
Kuo, HC
Liao, YS
Lin, GR
光電工程學系
Department of Photonics
關鍵字: metamorphic;InGaAs;heterostructure;p-i-n photodiode;GaAs
公開日期: 2005
摘要: A novel top-illuminated metamorphic In(0.53)Ga(0.47)As p-i-n photodiodes (MM-PlNPD) grown on GaAs substrate by using a linearly graded In(x)Ga(1-x)P (x graded from 0.51 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power (NEP), and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.77/0.59 (1310/1550 nm) A/W, 6.9x10(-11) W/Hz(1/2), and 7.5 GHz, respectively. The performances of the MM-PINPD on GaAs are demonstrated to be better than those of a similar device made on InGaAs/InP substrate.
URI: http://hdl.handle.net/11536/17648
http://dx.doi.org/10.1117/12.577048
ISBN: 0-8194-5578-4
ISSN: 0277-786X
DOI: 10.1117/12.577048
期刊: SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES
Volume: 5624
起始頁: 399
結束頁: 406
Appears in Collections:Conferences Paper


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