標題: Fabrication of high speed and reliable 850nm oxide-confined VCSELs for 10Gb/s data communication
作者: Kuo, HC
Chang, YH
Chang, YA
Tseng, KF
Laih, LH
Wang, SC
Yu, HC
Sung, CP
Yang, HP
光電工程學系
Department of Photonics
關鍵字: strain-compensated;rgh-speed electronics;VCSELs;InGaAsP/InGaP;proton-implant
公開日期: 2005
摘要: In this paper, we demonstrate high performance 850 nm InGaAsP/InGaP strain-compensated MQWs vertical-cavity surface-emitting lasers (VCSELs). These VCSELs exhibit superior performance with threshold currents of similar to 0.4 mA, and slope efficiencies of similar to 0.6 mW/mA. High modulation bandwidth of 14.5 GHz and modulation current efficiency factor of 11.6 GHz/(mA)(1/2) are demonstrated. We have accumulated life test data up to 1000 hours at 70 degrees C/8mA. In addition, we also report a high speed planarized 850nm oxide-implanted VCSELs process that does not require semiinsulating substrates, polyimide planarization process, or very small pad areas, therefore very promising in mass manufacture.
URI: http://hdl.handle.net/11536/17645
http://dx.doi.org/10.1117/12.577050
ISBN: 0-8194-5578-4
ISSN: 0277-786X
DOI: 10.1117/12.577050
期刊: SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES
Volume: 5624
起始頁: 50
結束頁: 57
顯示於類別:會議論文


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  1. 000227356100006.pdf