標題: Physics and modeling of Ge-on-Insulator MOSFETs
作者: Chin, A
Kao, HL
Tseng, YY
Yu, DS
Chen, CC
McAlister, SP
Chi, CC
交大名義發表
National Chiao Tung University
公開日期: 2005
摘要: We have used process and device simulation tools (T-Supreme and Medici) to analyze the measured DC characteristics of Ge-on-Insulator (GOI) MOSFETs. The GOI devices have higher drive current than do their Si counterparts, due to the smaller effective mass (m) and smaller Ge energy bandgap - however this also causes a larger off-state I(ds) leakage current. The simulations predict that the GOI MOSFETs have better RF gain and noise performance compared with Si devices. This is important for high speed operation as down-scaling continues.
URI: http://hdl.handle.net/11536/17622
http://dx.doi.org/10.1109/ESSDER.2005.1546641
ISBN: 0-7803-9203-5
ISSN: 1930-8876
DOI: 10.1109/ESSDER.2005.1546641
期刊: PROCEEDINGS OF ESSDERC 2005: 35TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE
起始頁: 285
結束頁: 288
顯示於類別:會議論文


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