Title: 10Gbps operation of a metamorphic InGaP buffered In0.53Ga0.47As p-i-n photodetector grown on GaAs substrate - art. no. 602023
Authors: Liao, YS
Lin, GR
Lin, CK
Chu, YS
Kuo, HC
Feng, M
光電工程學系
Department of Photonics
Keywords: metamorphic;In0.53Ga0.47As;InGaP;GaAs;p-i-n photodetector;receiver;OC-192
Issue Date: 2005
Abstract: A novel top-illuminated In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded metamorphic InxGa1-xP (x graded from 0.49 to 1) buffer layer has been demonstrated on the SONET OC-192 receiving performance. With a cost-efficient TO-46 package, the MM-PINPD at data rate of 10 Gbit/s can be obtained at minimum optical power of -19.5 dBm. At wavelength of 1550nm, the dark current, optical responsivities, noise equivalent power, and operational bandwidth of the MM-PIND with aperture diameter of 60 mu m are 13 pA, 0.6 A/W, 3.4 x 10(-15) W/Hz(1/2), and 8 GHz, respectively. All the parameters are comparable to those of similar devices made on InP substrate or other InGaAs products epitaxially grown on an InGaAlAs buffered GaAs substrate. The performances of the MM-PINPD on GaAs are analyzed by impulse injecting of 1.2-ps pulse-train, eye pattern at 10Gbps, and frequency response from VNA.
URI: http://hdl.handle.net/11536/17616
http://dx.doi.org/10.1117/12.636697
ISBN: 0-8194-6051-6
ISSN: 0277-786X
DOI: 10.1117/12.636697
Journal: Optoelectronic Materials and Devices for Optical Communications
Volume: 6020
Begin Page: 2023
End Page: 2023
Appears in Collections:Conferences Paper


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