標題: INVESTIGATION OF A HIGH-QUALITY AND ULTRAVIOLET-LIGHT TRANSPARENT PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATION
作者: WANG, CK
YING, TL
WEI, CS
LIU, LM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: PECVD;SINX;UV-TRANSMITTANCE;RI;EPROM
公開日期: 1-九月-1995
摘要: A high quality and ultraviolet-light transparent (UV-transparent) plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiNz) film is developed to form passivation layer for non-volatile memory devices. Comparing to the conventional PECVD SiNx film known to have tensile stress and opacity to ultraviolet-light (UV-light), the proposed SiNz film with very low compressive stress (<1x10(9) dyn/cm(2)) and excellent UV-transmittance (>70% for 1.6 mu m-thick film) can be achieved. The film stress is strongly related to RF input power during deposition process. The UV-transmittance is influenced by pressure and SiH4/NH3 flow ratio. It is also shown that the UV-transmittance is closely correlated to refractive index (RI), film density as well as N/Si ratio inside the film. This SiNx film has been successfully applied to erasable programming read-only memory (EPROM's) devices, and very good UV-erasability and reliability performances are demonstrated.
URI: http://dx.doi.org/10.1143/JJAP.34.4736
http://hdl.handle.net/11536/1761
ISSN: 0021-4922
DOI: 10.1143/JJAP.34.4736
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 34
Issue: 9A
起始頁: 4736
結束頁: 4740
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RX26800024.pdf