標題: Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off
作者: Chu, JT
Liang, WD
Kao, CC
Huang, HW
Chu, CF
Kuo, HC
Wang, SC
光電工程學系
Department of Photonics
關鍵字: GaN LEDs;laser lift-off (LLO);wafer bonding;large-area light-emitting LEDs
公開日期: 2005
摘要: Large-area (1000x1000 gm) p-side down InGaN light-emitting diodes (LEDs) have been fabricated by laser lift-off (LLO) technique. The p-side down LEDs with different geometric patterns of n-electrode were fabricated to investigate electrode pattern-dependent optical characteristics. Current crowding effect was first observed in in the p-side down InGaN LLO-LEDs. The LEDs with well designed n-electrode shows a uniform distribution of light-emitting pattern and higher out put power due to uniform current spreading and minimization of thermal effect. The output power saturation induced by current crowding in the LEDs with simplest geometric n-electrode was demonstrated. In absent of transparent contact layer for current spreading, the n-electrode pattern has remarkable influence on the current distribution and consequently the light output power of the large-area p-side down LEDs.
URI: http://hdl.handle.net/11536/17601
http://dx.doi.org/10.1117/12.583288
ISBN: 0-8194-5713-2
ISSN: 0277-786X
DOI: 10.1117/12.583288
期刊: Light-Emitting Diodes: Research, Manufacturing, and Applications IX
Volume: 5739
起始頁: 122
結束頁: 128
顯示於類別:會議論文


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  1. 000228826900016.pdf