Title: Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off
Authors: Chu, JT
Liang, WD
Kao, CC
Huang, HW
Chu, CF
Kuo, HC
Wang, SC
Department of Photonics
Keywords: GaN LEDs;laser lift-off (LLO);wafer bonding;large-area light-emitting LEDs
Issue Date: 2005
Abstract: Large-area (1000x1000 gm) p-side down InGaN light-emitting diodes (LEDs) have been fabricated by laser lift-off (LLO) technique. The p-side down LEDs with different geometric patterns of n-electrode were fabricated to investigate electrode pattern-dependent optical characteristics. Current crowding effect was first observed in in the p-side down InGaN LLO-LEDs. The LEDs with well designed n-electrode shows a uniform distribution of light-emitting pattern and higher out put power due to uniform current spreading and minimization of thermal effect. The output power saturation induced by current crowding in the LEDs with simplest geometric n-electrode was demonstrated. In absent of transparent contact layer for current spreading, the n-electrode pattern has remarkable influence on the current distribution and consequently the light output power of the large-area p-side down LEDs.
URI: http://hdl.handle.net/11536/17601
ISBN: 0-8194-5713-2
ISSN: 0277-786X
DOI: 10.1117/12.583288
Journal: Light-Emitting Diodes: Research, Manufacturing, and Applications IX
Volume: 5739
Begin Page: 122
End Page: 128
Appears in Collections:Conferences Paper

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