標題: A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)
作者: Kuo, Chien-I
Hsu, Heng-Tung
Wu, Chien-Ying
Chang, Edward Yi
Miyamoto, Yasuyuki
Chen, Yu-Lin
Biswas, Dhrubes
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: InAs-channel;HEMTs;sub-millimeter-wave
公開日期: 2009
摘要: A 40-nm T-gate high-electron-mobility-transistor with InAs/In(0.7)Ga(0.3)As composite-channel has been fabricated. The device exhibits a transconductance (g.) of 2200 mS/mm, a cutoff frequency f(T) of 506 GHz and a minimum noise figure of 1.21 dB at a frequency of 58 GHz. These performances make the device well-suited for millimeter-wave or sub-millimeter-wave applications.
URI: http://hdl.handle.net/11536/17560
http://dx.doi.org/10.1109/ICIPRM.2009.5012458
ISBN: 978-1-4244-3432-9
ISSN: 1092-8669
DOI: 10.1109/ICIPRM.2009.5012458
期刊: 2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM)
起始頁: 128
結束頁: 131
Appears in Collections:Conferences Paper


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