標題: ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON SI SUBSTRATE USING EPITAXIAL LIFT-OFF
作者: FAN, JC
LEE, CP
HWANG, JA
HWANG, JH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-九月-1995
摘要: Epitaxial lift-off (ELO) technique was used for the first time to transplant AlGaAs/GaAs Heterojunction Bipolar Transistors (HBT's) to Si substrates. Both preprocessed (devices processed before transplantation) and postprocessed (devices processed after transplantation) ELO HBT's On Si were demonstrated in this study. The characteristics of those HBT's on Si with either technique show nearly identical characteristics of the HBT's on GaAs without transplantation, indicating the film quality is maintained after transplantation. Devices with a high current gain of 550 were transplanted without any degradation, and the current gain is not limited by the ELO process. This current gain value is the highest reported for GaAs HBT's on Si with any techniques.
URI: http://dx.doi.org/10.1109/55.406799
http://hdl.handle.net/11536/1746
ISSN: 0741-3106
DOI: 10.1109/55.406799
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 16
Issue: 9
起始頁: 393
結束頁: 395
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RQ87100008.pdf