標題: EVALUATION OF NI-IN-NI MULTILAYERS FOR THERMALLY STABLE OHMIC CONTACTS TO N-GAAS
作者: HSIA, ST
LEE, CP
HWANG, HL
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: AUGER ELECTRON SPECTROSCOPY;GALLIUM ARSENIDE;CONTACT RESISTANCE;NICKEL
公開日期: 1-九月-1995
摘要: A thermally stable, low resistance ohmic contact system Ni-Ln-Ni to n-GaAs was investigated. The lowest value of the specific contact resistance rho(c) was 1.71 x 10(-4) Omega cm(2). Hearing the contact up to 400 degrees C for 5 h did not obviously change the value of rho(c). It was observed by Auger electron spectroscopy and X-ray diffraction that Ni-Ln compounds, Ga-Ni and InAs formed at the metal-GaAs interface. It was noted that In reacted with GaAs and formed a heterojunction ohmic contact (such as InAs-InxGa1-xAs-GaAs) and due to the low melting point (156 degrees C) of In, additions of Ni are needed to completely react the remaining In to form a high melting point compound.
URI: http://hdl.handle.net/11536/1745
ISSN: 0921-5107
期刊: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
Volume: 33
Issue: 2-3
起始頁: 178
結束頁: 181
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RV13800018.pdf