標題: DEPENDENCE OF ELECTRON-MOBILITY ON DOPED IMPURITIES
作者: CHEN, YF
KWEI, CM
SU, P
TUNG, CJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: ELECTRON-IMPURITY SCATTERING;CHARGE DENSITY DISTRIBUTION;VARIATIONAL STATISTICAL METHOD;MOMENTUM RELAXATION CROSS SECTION
公開日期: 1-九月-1995
摘要: The dependence of electron mobility on doped impurities was investigated. Analytical expressions of the momentum relaxation cross section and the electron mobility in n- and p-doped silicon for electron-impurity scatterings have been derived. Our approach involved the application of a screened scattering potential based on a charge density distribution for impurity ions in the semiconductor. This distribution was determined by the variational statistical method. Calculated results showed that ionized acceptor impurities in silicon scattered electron carriers less strongly than did ionized donor impurities. They also showed that majority electron mobility in n-type silicon was less than minority electron mobility in p-type silicon. These were consistent with experimental observations.
URI: http://dx.doi.org/10.1143/JJAP.34.4827
http://hdl.handle.net/11536/1744
ISSN: 0021-4922
DOI: 10.1143/JJAP.34.4827
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 34
Issue: 9A
起始頁: 4827
結束頁: 4833
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RX26800044.pdf